GROWTH TEMPERATURE DEPENDENCE OF Ge QUANTUM DOTS GROWN ON CARBON-IMPLANTED SI SUBSTRATES

Due to the low-dimensional confinement effect, self-assembled Ge quantum dots (QDs) grown on Si are expected to demonstrate novel optoelectronic properties, which can be applied to Si-based technology competitive with traditional optoelectronic III-V and other materials. However, this self-assembled method has not achieved the dot diameter and density comparable to those grown with the III-V semiconductor materials such as InGaAs/AlGaAs, InP/InGaP, AlInAs/AlGaAs, and GaSb/GaAs [1]. Recently, a new approach to scale down Ge dot sizes to less than 15nm in diameter has been reported [2-4]. Pre-deposition of a submonolayer carbon atom on Si substrate results in very small and high density Ge dots because carbon atoms induce a strain field at the interface [2-7].